2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SA1400-Z features high voltage: v ceo =-400v high speed:tr 1.0s absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo -400 v collector to emitter voltage v ceo -400 v emitter to base voltage v ebo -7 v collector current (dc) i c -0.5 a collector current (pulse) *1 i c -1 a total power dissipation (ta=25 )*2 p t 2 w junction tmeperature t j 150 storage temperature t stg -55 to 150 *1 pw 300s,duty cycle 10% *2 when mounted on ceramic substrate of 7.5cm 2 x0.7mm electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =-400v,i e =0 -100 a emitter cutoff current i ebo v eb =-5v,i c =0 -10 v dc current gain* h fe v ce =-5v,i c =-50ma 30 200 collector saturation voltage * v ce(sat) i c =-100ma,i b =-10ma -1 v base saturation voltage * v be(sat) i c =-100ma,i b =-10ma -1.2 v turn-on time t on i c =-100ma,r l =1.5k 1 storage time t stg i b1 =-i b2 =-10ma,v cc =-150v 5 fall time t f pw 50s,duty cycle 2% 1 *pw 350s,duty cycle 2% s h fe classification marking n m l k hfe 30 to 60 40 to 80 60 to 120 100 to 200 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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